MOSFET, N, DIRECTFET, MQ; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:59A; Resistance, Rds On:11.5mohm; Voltage, Vgs Rds on Measurement:7V; Voltage, Vgs th Typ:2.1V; Case Style:MQ; Termination Type:SMD; Capacitance, Ciss Typ:2270pF; Charge, Qrr Typ @ Tj = 25°C:28nC; Current, Idm Pulse:92A; Depth, External:6.35mm; IC Package (Case style):MQ; Length / Height, External:0.7mm; Marking, SMD:6604; Pins, No. of:7; Power Dissipation:2.3W; Power, Pd:2.3W; Resistance, Rds on Max:11.5mohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Time, trr Typ:31ns; Transistors, No. of:1; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs Max:12V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1V; Width, External:5.05mm

MOSFET транзистор IRF6604TR1. Описание в формате PDF

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УЛ150748:92