IRFBF20S PBF MOSFET, N, 900V, 1.7A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:1.7A; Resistance, Rds On:8ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Capacitance, Ciss Typ:490pF; Case Style, Alternate:D2-PAK; Charge, Gate N-channel:38nC; Current, Iar:1.7A; Current, Idm Pulse:6.8A; Current, Idss Max:100чA; Depth, External:15.49mm; Energy, Avalanche Repetitive Ear:5.4mJ; Energy, Avalanche Single Pulse Eas:180mJ; Length / Height, External:4.69mm; Marking, SMD:IRFBF20S; Power Dissipation:54W; Power Dissipation, on 1 Sq. PCB:3.1W; Power, Pd:54W; Resistance, Rds on @ Vgs = 10V:8ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.1°C/W; Time, Fall:32ns; Time, Rise:21ns; Time, trr Typ:350ns; Transistors, No. of:1; Voltage, Vds:900V; Voltage, Vds Max:900V; Voltage, Vgs Rds N Channel:10V

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УЛ218898:146

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