MOSFET, N, 900V, 1.9A, TO-220FP; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:1.9A; Resistance, Rds On:3.7ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Iar:1.9A; Current, Idm Pulse:7.6A; Current, Idss Max:100чA; Energy, Avalanche Repetitive Ear:2.5mJ; Energy, Avalanche Single Pulse Eas:220mJ; Pins, No. of:3; Power Dissipation:35W; Power, Pd:35W; Power, Ptot:35W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:3.6°C/W; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds:900V; Voltage, Vds Max:900V; Voltage, Vgs Max:20V; Voltage, Vgs th Max:4V; Weight:2g; dv/dt:1.5V/s

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УЛ258827:74