MOSFET, N, DIRECTFET, SH; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:19A; Resistance, Rds On:62mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4.8V; Case Style:SH; Termination Type:SMD; Capacitance, Ciss Typ:530pF; Charge, Qrr Typ @ Tj = 25°C:37nC; Current, Idm Pulse:34A; Depth, External:4.85mm; IC Package (Case style):SH; Length / Height, External:0.7mm; Marking, SMD:6655; Pins, No. of:6; Power Dissipation:4.2W; Power, Pd:2.2W; Resistance, Rds on Max:62mohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-40°C; Time, trr Typ:31ns; Transistors, No. of:1; Voltage, Vds:100V; Voltage, Vds Max:100V; Voltage, Vgs Max:20V; Voltage, Vgs th Max:4.8V; Voltage, Vgs th Min:2.8V; Width, External:3.95mm

MOSFET транзистор IRF6655TR1. Описание в формате PDF

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