MOSFET, N TO-263; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:9.3A; Resistance, Rds On:0.3ohm; Case Style:TO-263; Termination Type:SMD; Capacitance, Ciss Typ:575pF; Charge, Gate N-channel:35nC; Current, Iar:9.3A; Current, Idm Pulse:37A; Current, Idss Max:25чA; Depth, External:15.49mm; Energy, Avalanche Repetitive Ear:8.2mJ; Energy, Avalanche Single Pulse Eas:94mJ; Length / Height, External:4.69mm; Marking, SMD:IRF630NS; Power Dissipation:82W; Power Dissipation, on 1 Sq. PCB:3.8W; Power, Pd:82W; Resistance, Rds on @ Vgs = 10V:0.3ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.83°C/W; Time, Fall:15ns; Time, Rise:14ns; Time, trr Typ:117ns; Transistors, No. of:1; Voltage, Vds Max:200V; Voltage, Vgs Rds N Channel:10V; Voltage, Vgs th Max:4V; Voltage, Vgs th Min:2V; Width, External:10.16mm

------------------
УЛ49417:148

Купившие этот товар также заказали:

STXECAP 4.7/100V 0511 105C SAM

SSECAP 4.7/50V 0407 105C

ECAP 1000/16V 1016 105C PBF

ECAP 2.2/100V 0511 JAM

ECAP 10/63V 0511 SAM

SMECAP 22/100V 0812 NOVA