MOSFET, P, SOT-23; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:0.17A; Resistance, Rds On:8ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1.5V; Case Style:SOT-23; Termination Type:SMD; Temperature, Operating Range:-55°C to +150°C; Capacitance, Ciss Typ:19pF; Current, Idm Pulse:0.68A; Current, Idss Max:1чA; Depth, External:2.5mm; Device Marking:BSS84P; Energy, Avalanche Repetitive Ear:0.036mJ; Energy, Avalanche Single Pulse Eas:2.6mJ; Length / Height, External:1.12mm; Marking, SMD:YBs; Pins, No. of:3; Power Dissipation:0.36W; Power, Pd:0.36W; Power, Ptot:0.36W; Resistance, Rds on @ Vgs = 10V:8ohm; Resistance, Rds on @ Vgs = 4.5V:12ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Time, Fall:34ns; Time, Rise:9ns; Time, trr Typ:23ns; Transistors, No. of:1; Voltage, Vds Max:60V; Voltage, Vgs th Max:-2V; Voltage, Vgs th Min:-1V; Width, External:3.05mm

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УЛ167355:9