IRL640S PBF MOSFET, N, 200V, 17A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:17A; Resistance, Rds On:0.18ohm; Voltage, Vgs Rds on Measurement:5V; Voltage, Vgs th Typ:2V; Case Style:D2-PAK; Termination Type:SMD; Capacitance, Ciss Typ:1800pF; Case Style, Alternate:D2-PAK; Charge, Gate N-channel:66nC; Current, Iar:10A; Current, Idm Pulse:68A; Current, Idss Max:25чA; Depth, External:15.49mm; Energy, Avalanche Repetitive Ear:13mJ; Energy, Avalanche Single Pulse Eas:580mJ; Length / Height, External:4.69mm; Marking, SMD:L640S; Power Dissipation:125W; Power Dissipation, on 1 Sq. PCB:3.1W; Power, Pd:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.0°C/W; Time, Fall:52ns; Time, Rise:83ns; Time, trr Typ:56ns; Transistors, No. of:1; Voltage, Vds:200V; Voltage, Vds Max:200V; Voltage, Vgs Rds N Channel:5V; Voltage, Vgs th Max:2V

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